The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior
The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior
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DOI：
10.1063/1.4896103
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发表时间：
2014-09
影响因子：
3.2
通讯作者：
Tsung-Jui Yang;R. Shivaraman;J. Speck;Yuh‐Renn Wu
中科院分区：
文献类型：
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作者：
Tsung-Jui Yang;R. Shivaraman;J. Speck;Yuh‐Renn Wu
在本文中，我们描述了 InGaN 量子阱中固有的铟波动对 GaN 基发光二极管 (LED) 的载流子传输、效率下降和发射光谱的影响。在 3D 模拟中使用了真实的和随机生成的铟涨落，并与具有均匀铟分布的量子阱进行了比较。我们发现，无需进一步假设，通过考虑自然纳米级铟波动，可以大大改善 LED 中的电学和光学特性（例如载流子传输、辐射和俄歇复合以及效率下降）的模拟。
In this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations.