Enhanced Performance of Fullerene n‐Channel Field‐Effect Transistors with Titanium Sub‐Oxide Injection Layer
Enhanced Performance of Fullerene n‐Channel Field‐Effect Transistors with Titanium Sub‐Oxide Injection Layer
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DOI：
10.1002/adfm.200900189
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发表时间：
2009-05
影响因子：
19
通讯作者：
Shinuk Cho;J. Seo;Kwanghee Lee;A. Heeger
中科院分区：
文献类型：
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作者：
Shinuk Cho;J. Seo;Kwanghee Lee;A. Heeger
通过引入钛低价氧化物（TiOx）注入层证明了n沟道有机场效应晶体管（OFFET）的增强性能。n-通道OFFEm利用[6，6]-苯基-C61丁酸甲酯（PC61 BM）或[6，6]-苯基-C71丁酸甲酯（PC 71 BM）作为通道中的半导体。在TiOx注入层的情况下，使用Al作为源/漏电极的PC 61 BM和PC 71 BM FET的电子迁移率与使用Ca作为源/漏电极的OFFERT获得的电子迁移率相当。接触电阻（Rc）的直接测量显示具有TiOx层的FET的Rc值显著降低。紫外光电子能谱（UPS）研究表明，由于TiOx的相对强的界面偶极子，TiOx层降低了电子注入势垒。除了用作消除接触电阻的电子注入层之外，TiOx层还用作防止O2和H2O渗透的钝化层;具有TiOx注入层的器件在暴露于空气时表现出寿命的显著改善。
Enhanced performance of n‐channel organic field‐effect transistors (OFETs) is demonstrated by introducing a titanium sub‐oxide (TiOx) injection layer. The n‐channel OFETs utilize [6,6]‐phenyl‐C61 butyric acid methyl ester (PC61BM) or [6,6]‐phenyl‐C71 butyric acid methyl ester (PC71BM) as the semiconductor in the channel. With the TiOx injection layer, the electron mobilities of PC61BM and PC71BM FET using Al as source/drain electrodes are comparable to those obtained from OFETs using Ca as the source/drain electrodes. Direct measurement of contact resistance (Rc) shows significantly decreased Rc values for FETs with the TiOx layer. Ultraviolet photoelectron spectroscopy (UPS) studies demonstrate that the TiOx layer reduces the electron injection barrier because of the relatively strong interfacial dipole of TiOx. In addition to functioning as an electron injection layer that eliminates the contact resistance, the TiOx layer acts as a passivation layer that prevents penetration of O2 and H2O; devices with the TiOx injection layer exhibit a significant improvement in lifetime when exposed to air.