Oxide semiconductor gas sensors
Oxide semiconductor gas sensors
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DOI：
10.1023/a:1023436725457
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发表时间：
2003-04-01
影响因子：
3
通讯作者：
Shimanoe, K
中科院分区：
文献类型：
--
作者：
Yamazoe, N;Sakai, G;Shimanoe, K
半导体气体传感器利用由半导体氧化物制成的多孔多晶电阻。其工作原理涉及到每个氧化物颗粒表面的受体功能和每个晶界的换能器功能。此外，传感体的效用因子也参与了气体响应的确定。因此，传感器设计的概念是通过考虑这三个关键因素来确定的。要求是选择具有高传导电子迁移率和令人满意的稳定性（换能器功能）的碱性氧化物，选择增强表面反应或目标气体吸附的外来受体（受体功能），以及制造高多孔，薄的传感体（效用因子）。介绍了基于这些因素的传感器设计的最新进展。
Semiconductor gas sensors utilize porous polycrystalline resistors made of semiconducting oxides. The working principle involves the receptor function played by the surface of each oxide grain and the transducer function played by each grain boundary. In addition, the utility factor of the sensing body also takes part in determining the gas response. Therefore, the concepts of sensor design are determined by considering each of these three key factors. The requirements are selection of a base oxide with high mobility of conduction electrons and satisfactory stability (transducer function), selection of a foreign receptor which enhances surface reactions or adsorption of target gas (receptor function), and fabrication of a highly porous, thin sensing body (utility factor). Recent progress in sensor design based on these factors is described.