Single crystal hybrid perovskite field-effect transistors
Single crystal hybrid perovskite field-effect transistors
复制标题
单晶混合钙钛矿场效应晶体管
DOI：
10.1038/s41467-018-07706-9
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发表时间：
2018-12-17
影响因子：
16.6
通讯作者：
Amassian, Aram
中科院分区：
文献类型：
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作者：
Yu, Weili;Li, Feng;Amassian, Aram
近年来，随着有机-无机复合钙钛矿的出现，光伏、光检测和光发射等领域呈现出巨大的活力。然而，关于钙钛矿型场效应管的报道要少得多。晶体管的横向和界面传输要求使其特别容易受到多晶膜和块状单晶中普遍存在的表面污染和缺陷的影响。在这里，我们展示了一种空间受限的逆温晶化策略，该策略合成了亚纳米表面粗糙度和非常低的表面污染的微米薄的甲基铵卤化铅钙钛矿MAPbX(3)(X=Cl，Br，I)单晶。这有利于将MAPbX3晶体集成到双极型晶体管中，在p沟道和n沟道器件中的室温场效应迁移率分别达到4.7cm2V-1和1.5cm2V-1 S(-1)，通断比为10(4)~10(5)，通断电压较低。这项工作为将混合钙钛矿晶体集成到印刷、灵活和透明的电子设备中铺平了道路。
The fields of photovoltaics, photodetection and light emission have seen tremendous activity in recent years with the advent of hybrid organic-inorganic perovskites. Yet, there have been far fewer reports of perovskite-based field-effect transistors. The lateral and interfacial transport requirements of transistors make them particularly vulnerable to surface contamination and defects rife in polycrystalline films and bulk single crystals. Here, we demonstrate a spatially-confined inverse temperature crystallization strategy which synthesizes micrometre-thin single crystals of methylammonium lead halide perovskites MAPbX(3) (X = Cl, Br, I) with sub-nanometer surface roughness and very low surface contamination. These benefit the integration of MAPbX3 crystals into ambipolar transistors and yield record, room-temperature field-effect mobility up to 4.7 and 1.5 cm(2) V-1 s(-1) in p and n channel devices respectively, with 10(4) to 10(5) on-off ratio and low turn-on voltages. This work paves the way for integrating hybrid perovskite crystals into printed, flexible and transparent electronics.