A Kinetic Monte Carlo Study of Retention Time in a POM Molecule-Based Flash Memory
A Kinetic Monte Carlo Study of Retention Time in a POM Molecule-Based Flash Memory
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DOI：
10.1109/tnano.2020.3016182
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发表时间：
2020-01-01
影响因子：
2.4
通讯作者：
Asenov, Asen
中科院分区：
文献类型：
--
作者：
Badami, Oves;Sadi, Toufik;Asenov, Asen
近年来，传统和新型存储器件的建模获得了显著的牵引力。这主要是因为需要存储越来越大量的数据，需要更好地了解新型存储器设备的工作原理，以实现未来技术的更快发展。此外，从计算的角度来看，内存计算也非常感兴趣，以克服冯-诺依曼架构中普遍存在的数据传输瓶颈。这些重要的因素需要开发全面的TCAD仿真工具，可以用于模拟闪存单元的栅极氧化物中的载流子动力学。在这项工作中，我们介绍了动力学蒙特卡罗模块，我们已经开发和集成在纳米电子模拟软件（NESS）-模拟电子电荷在闪存型结构的传输。使用所开发的模块，我们进行保留时间分析的聚氧乙烯（POM）分子为基础的电荷陷阱闪存。我们的模拟研究强调，POM分子的保留特性具有独特的功能，取决于隧穿氧化物的性质。
The modelling of conventional and novel memory devices has gained significant traction in recent years. This is primarily because the need to store an increasingly larger amount of data demands a better understanding of the working of the novel memory devices, to enable faster development of the future technology generations. Furthermore, in-memory computing is also of great interest from the computational perspectives, to overcome the data transfer bottleneck that is prevalent in the von-Neumann architecture. These important factors necessitate the development of comprehensive TCAD simulation tools that can be used for modeling carrier dynamics in the gate oxides of the flash memory cells. In this work, we introduce the kinetic Monte Carlo module that we have developed and integrated within the Nano Electronic Simulation Software (NESS) - to model electronic charge transport in Flash memory type structures. Using the developed module, we perform retention time analysis for a polyoxometalate (POM) molecule-based charge trap flash memory. Our simulation study highlights that retention characteristics for the POM molecules have a unique feature that depends on the properties of the tunneling oxide.