Properties of Fe-doped semi-insulating GaN structures
Properties of Fe-doped semi-insulating GaN structures
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DOI：
10.1116/1.1633776
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发表时间：
2004-01
影响因子：
1.4
通讯作者：
A. Polyakov;N. Smirnov;A. Govorkov;S. Pearton
中科院分区：
文献类型：
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作者：
A. Polyakov;N. Smirnov;A. Govorkov;S. Pearton
报道了在GaN薄膜下部掺杂Fe后的半绝缘GaN薄膜的特性。薄膜的300 K方块电阻率为2×1010 Ω/平方，暗电导率的激活能为0.5 eV。费米能级也固定在EC−0.5 eV。在薄膜的Fe掺杂部分中，0.5 eV陷阱的浓度为3×1016 cm-3。还存在高浓度的更深的电子陷阱，其水平在导带底部以下接近0.9eV，以及空穴陷阱，其水平在价带顶部以上接近0.9eV。在材料的光致发光光谱中观察到Fe ~（3+）中心的内跃迁。
The properties of semi-insulating GaN films with the lower part of the film doped with Fe are reported. The 300 K sheet resistivity of the films was 2×1010 Ω/square with an activation energy of the dark conductivity of 0.5 eV. The Fermi level is also pinned at EC−0.5 eV. The concentration of the 0.5 eV traps in the Fe-doped portion of the films was 3×1016 cm−3. Also present is a high concentration of deeper electron traps with the level near 0.9 eV below the bottom of the conduction band and of hole traps with the level near 0.9 eV above the top of the valence band. Intracenter transitions of the Fe3+ center are observed in the photoluminescence spectra from the material.