Demonstrating a holographic memory having 100 Mrad total-ionizing-dose tolerance
Demonstrating a holographic memory having 100 Mrad total-ionizing-dose tolerance
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展示具有 100 Mrad 总电离剂量耐受性的全息存储器
DOI：
10.1109/icmae.2016.7549569
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
A. Ogiwara
中科院分区：
文献类型：
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作者：
Y. Ito;M. Watanabe;A. Ogiwara
目前，空间系统需要高度耐辐射的存储器。如果具有高耐辐射性的存储器可用，则可以减少或消除用于太空的嵌入式系统的屏蔽，从而大大减轻此类太空嵌入式系统的重量。这项研究检查了全息存储器的抗辐射特性。使用钴 60 伽马辐射源，对光聚合物全息存储器进行了辐射实验。结果表明，全息存储器可以在 100 Mrad 的总电离剂量下正常工作。全息存储器的抗辐射能力比电可擦除可编程只读存储器（EEPROM）高300倍以上。此外，本文还展示了应用于光学可重构门阵列的演示。配置过程可以通过使用辐射损坏的全息存储器来执行。
Currently, space systems require highly radiation tolerant memory. If memory with high radiation tolerance were available, then shielding of embedded systems for use in space could be reduced or removed, thereby greatly decreasing the weight of such space embedded systems. This study examines the radiation-hardened characteristics of a holographic memory. Using a cobalt 60 gamma radiation source, radiation experiments were conducted for a photopolymer holographic memory. Results show that the holographic memory can function correctly at a 100 Mrad total-ionizing dose. The radiation tolerance of the holographic memory is over 300 times higher than that of an electrically erasable programmable read-only memory (EEPROM). Moreover, this paper shows a demonstration applied for an optically reconfigurable gate array. The configuration procedure could be executed by using the radiation-damaged holographic memory.