Heterogeneous CMOS Photonics Based on SiGe/Ge and III-V Semiconductors Integrated on Si Platform
Heterogeneous CMOS Photonics Based on SiGe/Ge and III-V Semiconductors Integrated on Si Platform
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基于 SiGe/Ge 和 III-V 族半导体集成在 Si 平台上的异构 CMOS 光子学
DOI：
10.1109/jstqe.2017.2660884
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发表时间：
2017
影响因子：
4.9
通讯作者：
Shinich Takagi
中科院分区：
文献类型：
--
作者：
Mitsuru Takenaka,Younghyun Kim;Jaehoon Han;Jian Kang;Yuki Ikku;Yongpeng Cheng;Jinkwon Park;Misa Yoshida;Seiya Takashima;Shinich Takagi
SiGe、Ge 和 III-V 半导体在 Si 上的异质集成为通过互补金属氧化物半导体 (CMOS) 工艺开发高性能光子集成电路提供了许多机会。我们发现应变 SiGe 具有比 Si 更大的自由载流子效应，有助于提高 Si 基光调制器的调制效率。除了采用 GeO 2 钝化的低暗电流 Ge 光电探测器 (PD) 之外，我们还研究了中红外波长的 Ge CMOS 光子学平台。我们在绝缘体上Ge晶圆上展示了Ge无源波导和载流子注入可变光衰减器（VOA）。我们还研究了 III-V 绝缘体上 (III-V-OI) 晶圆上的 III-V CMOS 光子平台。 III-V-OI 结构中的强光学限制使得能够实现类似于硅光子学中的超小型 III-V 无源波导。载流子注入 InGaAsP 光开关和 VOA 以及 InGaAs 波导 PD 也在 III-V-OI 晶圆上进行了演示。我们讨论异构 CMOS 光子技术为近红外和中红外应用开发高性能电子光子集成电路的机遇和挑战。
The heterogeneous integration of SiGe, Ge, and III-V semiconductors on Si provides many opportunities to develop high-performance photonic integrated circuits through complementary metal oxide semiconductor (CMOS) processes. We found that strained SiGe possesses greater free-carrier effects than Si, contributing to the improved modulation efficiency of Si-based optical modulators. In addition to low-dark-current Ge photodetectors (PDs) with GeO 2 passivation, we investigated Ge CMOS photonics platform for midinfrared wavelengths. We demonstrated Ge passive waveguides and carrier-injection variable optical attenuators (VOAs) on a Ge-on-insulator wafer. We also investigated III-V CMOS photonics platform on a III-V-on-insulator (III-V-OI) wafer. The strong optical confinement in the III-V-OI structure enabled the realization of ultrasmall III-V passive waveguides similarly to those in Si photonics. Carrier-injection InGaAsP optical switches and VOAs as well as InGaAs waveguide PDs were also demonstrated on III-V-OI wafers. We discuss the opportunities and challenges of heterogeneous CMOS photonics technologies to develop high-performance electronic-photonic integrated circuits for near-infrared and midinfrared applications.