GaN-based avalanche photodiodes
GaN-based avalanche photodiodes
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GaN基雪崩光电二极管
DOI：
10.1109/drc.1998.731118
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
R. Aggarwal
中科院分区：
文献类型：
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作者：
S. Verghese;K. A. Mcintosh;R. Molnar;C.;K. Molvar;I. Melngailis;R. Aggarwal
适用于需要宽带宽和高灵敏度应用的可见盲紫外传感器将受益于具有内部增益机制的雪崩光电二极管 (APD)。本文首次清晰地观察到了用 III-V 族材料系统制造的紫外光电二极管的雪崩倍增增益。光电二极管由通过氢化物气相外延 (HVPE) 在蓝宝石衬底上生长的 GaN 层制成（Molnar 等人，J. Crystal Growth，第 178 卷、第 147 卷、1997 年）。首先，沉积 10 /spl mu/m 厚的 n 型 GaN 层，然后沉积 0.25 /spl mu/m 厚的 Zn 掺杂“i”层。通过反应离子蚀刻形成直径为30/splμ/m的圆形台面，并与半透明Ti膜接触。
Visible-blind UV sensors for applications that require both wide bandwidth and high sensitivity will benefit from avalanche photodiodes (APDs) that have an internal gain mechanism. This paper reports the first clear observation of avalanche multiplication gain in an ultraviolet photodiode fabricated in the III-V materials system. The photodiodes were fabricated from GaN layers grown on a sapphire substrate by hydride vapour phase epitaxy (HVPE) (Molnar et al., J. Crystal Growth, vol. 178, 147, 1997). First, a 10 /spl mu/m thick layer of n-type GaN was deposited, followed by a 0.25 /spl mu/m thick Zn-doped "i" layer. Circular mesas of 30 /spl mu/m diameter were formed by reactive ion etching and were contacted with a semitransparent Ti film.