Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes
Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes
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DOI：
10.1063/1.3484280
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发表时间：
2010-08
影响因子：
4
通讯作者：
C. Bayram;Z. Vashaei;M. Razeghi
中科院分区：
文献类型：
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作者：
C. Bayram;Z. Vashaei;M. Razeghi
在c面侧向外延生长(LEO)GaN/蓝宝石和c面自支撑(FS)GaN上生长了由Al0.2Ga0.8N/GaN双势垒(DB)有源层组成的III-氮化物共振隧穿二极管(RTD)。这两个模板上的RTDS在室温下都表现出负差分电阻，制成的台面直径从5到35μm。分析并报道了作为器件尺寸和衬底选择的函数的NDR特性(NDR开始时的电压和电流密度以及电流峰谷比)。我们的结果表明，LEO RTDS的性能与FS RTDS相当，而DB有源层的设计和质量一直是III-氮化物RTDS的瓶颈。
III-nitride resonant tunneling diodes (RTDs), consisting Al0.2Ga0.8N/GaN double-barrier (DB) active layers, were grown on c-plane lateral epitaxial overgrowth (LEO) GaN/sapphire and c-plane freestanding (FS) GaN. RTDs on both templates, fabricated into mesa diameters ranging from 5 to 35 μm, showed negative differential resistance (NDR) at room temperature. NDR characteristics (voltage and current density at NDR onset and current-peak-to-valley ratio) were analyzed and reported as a function of device size and substrate choice. Our results show that LEO RTDs perform as well as FS ones and DB active layer design and quality have been the bottlenecks in III-nitride RTDs.