Influence of the film thickness on the structure, optical and electrical properties of ITO coatings deposited by sputtering at room temperature on glass and plastic substrates
Influence of the film thickness on the structure, optical and electrical properties of ITO coatings deposited by sputtering at room temperature on glass and plastic substrates
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DOI：
10.1088/0268-1242/23/7/075002
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发表时间：
2008-07
影响因子：
1.9
通讯作者：
C. Guillén;J. Herrero
中科院分区：
文献类型：
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作者：
C. Guillén;J. Herrero
在玻璃和聚对苯二甲酸乙二醇酯（PET）基板上通过溅射在室温下沉积厚度在0.2和0.7 μm之间的透明导电氧化铟锡（ITO）薄膜。所有薄膜均为多晶，随着薄膜厚度的增加，晶粒尺寸增大，晶格畸变减小。此外，随着薄膜厚度的增加，薄膜在近红外区的透过率降低，载流子浓度增加。对于相同的厚度，在PET衬底上生长的层的晶格畸变略低，载流子浓度较高。应用于玻璃和塑料衬底上生长的薄膜，建立了晶格畸变与自由载流子浓度之间的直接关系。通过调节ITO膜层厚度，在室温下实现了薄膜的方块电阻小于15 Ω sq−1，平均可见光透过率约为90%。
Transparent and conductive indium tin oxide (ITO) films with thickness between 0.2 and 0.7 µm were deposited by sputtering at room temperature on glass and polyethylene terephthalate (PET) substrates. All films were polycrystalline, with crystallite size increasing and lattice distortion decreasing when the film thickness was increased. Besides, transmission in the near-infrared region is found to be decreasing and carrier concentration increasing when the film thickness was increased. For the same thickness, the lattice distortion is slightly lower and the carrier concentration higher for the layers grown on PET substrates. A direct relationship between the lattice distortion and the free carrier concentration has been established, applying to the films grown on glass and plastic substrates. By adjusting ITO coating thickness, sheet resistance below 15 Ω sq−1 and average visible transmittance about 90% have been achieved by sputtering at room temperature.