Preferential Diffusion of Vacancies Perpendicular to the Dimers on Si(001)2×1 Surfaces Studied by UHV REM
Preferential Diffusion of Vacancies Perpendicular to the Dimers on Si(001)2×1 Surfaces Studied by UHV REM
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UHV REM 研究 Si(001)2×1 表面垂直于二聚体的空位优先扩散
DOI：
10.1143/jjap.28.l1042
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发表时间：
1989
影响因子：
1.5
通讯作者：
K. Yagi
中科院分区：
文献类型：
--
作者：
Hisatoshi Kahata;K. Yagi
本文用反射电子显微镜研究了空位在Si(001)2×1表面的各向异性扩散。在700℃、10-8Torr的氧气中，在2×1和1×2尺寸相似的矩形梯级表面上均匀地引入空位，2×1和1×2磁区的长边分别垂直于和平行于二聚体方向。观察到空穴是通过空位的结合而成核的，最好是在2×1的磁畴中。这是由于空位扩散的各向异性导致这两个区域的空位浓度不同造成的。这一事实表明，空位的易扩散垂直于二聚体方向。
This paper describes anisotropic diffusion of vacancies on Si(001)2×1 surfaces studied by reflection electron microscopy. Vacancies were introduced uniformly on surface terraces of rectangular 2×1 and 1×2 domains of similar size by exposure to oxygen at 10-8 Torr at 700°C. The longer sides of the 2×1 and 1×2 domains were perpendicular and parallel to the dimer direction, respectively. It was observed that hollows were nucleated by coalescence of the vacancies preferably in the 2×1 domains. This was due to anisotropy of vacancy diffusion which caused different vacancy concentrations in the two domains. This fact indicates that easy diffusion of the vacancies is perpendicular to the dimer direction.