Plasma source ion implantation dose uniformity of a 2×2 array of spherical targets
Plasma source ion implantation dose uniformity of a 2×2 array of spherical targets
复制标题
2×2 球形靶阵列的等离子体源离子注入剂量均匀性
DOI：
10.1063/1.342942
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发表时间：
1989
影响因子：
3.2
通讯作者：
G. Meeker
中科院分区：
文献类型：
--
作者：
J. Conrad;S. Baumann;R. Fleming;G. Meeker
我们用卢瑟福背散射光谱和二次离子质谱仪表征了等离子体源离子注入(PSII)所能达到的离子注入剂量的均匀性，PSII是一种用于非半导体应用的非视线离子注入技术。为了表征PSII所能达到的剂量均匀度，4个球形的Ti-6Al-4V靶以2×2方阵的形式同时注入在密度为3×109 cm−3的氮等离子体中，能量为50keV，标称剂量为3×1017个原子/cm~2。测量的残留剂量和平均射程的均方根偏差均小于15%，在离子注入的非半导体应用中处于可接受的容差范围内。我们的结果表明，PSII可以在非平面靶上获得可接受的剂量均匀，而不需要靶操作，并且这种均匀可以在批处理模式下实现。
We have employed Rutherford backscattering spectroscopy and secondary ion mass spectrometry to characterize the ion implantation dose uniformity which can be achieved with plasma source ion implantation (PSII), a non‐line‐of‐sight technique for ion implantation of nonplanar targets in nonsemiconductor applications. In order to characterize the dose uniformity achievable with PSII, four spherical Ti‐6Al‐4V targets were PSII implanted simultaneously as a 2×2 square array in a nitrogen plasma with density 3×109 cm−3 at an energy of 50 keV to a nominal dose of 3×1017 atoms/cm2. The measured root‐mean‐square variation of both the retained dose and the mean range was found to be less than 15%, which is well within the acceptable tolerance range for nonsemiconductor applications of ion implantation. Our results demonstrate that PSII can achieve acceptable dose uniformity on nonplanar targets without target manipulation, and that such uniformity can be achieved in a batch processing mode.