Voltage-induced coercivity change in FePt/MgO stacks with different FePt thicknesses
Voltage-induced coercivity change in FePt/MgO stacks with different FePt thicknesses
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DOI：
10.1088/0022-3727/46/28/285002
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发表时间：
2013-07-17
影响因子：
3.4
通讯作者：
Takanashi, Koki
中科院分区：
文献类型：
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作者：
Kikuchi, Yusuke;Seki, Takeshi;Takanashi, Koki
通过施加电压(V-APP)研究了不同FePT厚度(t(FePT))的FePT/MgO电堆的磁特性，其中t(FePT)在0.6~1.5 nm范围内变化。当t(FePT)降低时，样品的矫顽力(H-c)变化非常显著，在+5~-13V范围内改变V-app，当t(FePT)=0.6 nm时，Hc的变化为45Oe。然而，无论V-APP如何，反常霍尔效应的电阻变化几乎保持不变。这些实验结果表明，在目前的器件中，可以通过施加V-APP来调制FePT和MgO之间的界面磁各向异性，从而导致FePT层中H-c的电压感应变化。
We studied magnetic properties by applying electric voltage (V-app) to FePt/MgO stacks with different FePt thicknesses (t(FePt)), where t(FePt) was varied in the range from 0.6 to 1.5 nm. The change in coercivity (H-c) became remarkable when t(FePt) was reduced, and a change in H-c of 45 Oe was achieved for t(FePt) = 0.6 nm by changing V-app in the range from +5 to -13V. However, the resistance change of the anomalous Hall effect remained almost constant regardless of V-app. These experimental results suggest the possibility of interface magnetic anisotropy between FePt and MgO being modulated in the present devices by applying V-app, which leads to voltage-induced change in H-c in the FePt layer.