Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes.
Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes.
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DOI：
10.1038/ncomms12357
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发表时间：
2016-08-11
影响因子：
16.6
通讯作者：
Liu Z
中科院分区：
文献类型：
--
作者：
Liu F;You L;Seyler KL;Li X;Yu P;Lin J;Wang X;Zhou J;Wang H;He H;Pantelides ST;Zhou W;Sharma P;Xu X;Ajayan PM;Wang J;Liu Z
二维（2D）材料已成为各种光电应用的有前途的候选人，基于其不同的电子性能，从绝缘到超导。然而，合作的现象，如铁电性在2D极限还没有得到很好的探索。本文报道了二维CuInP 2S 6（CIPS）的室温铁电性，其转变温度为320 K。在厚度约为4 nm的CIPS中观察到了可切换的偏振。为了证明这种二维铁电材料的潜力，我们制备了一个由CIPS/Si异质结构形成的货车范德华（vdW）铁电二极管，它表现出良好的记忆行为，开/关比为100。将铁电性添加到2D系列中为许多新颖的应用开辟了可能性，包括传感器、致动器、非易失性存储器器件和基于2D铁电性的各种vdW异质结构。 二维材料在电子学方面有着广阔的应用前景，但对二维材料的协同效应的研究还有待于进一步的探索。在这里，Liu等人报道了在室温下薄CuInP 2S 6膜中的可切换铁电极化，证明了基于二维铁电性的开/关比为100的良好记忆行为。
Two-dimensional (2D) materials have emerged as promising candidates for various optoelectronic applications based on their diverse electronic properties, ranging from insulating to superconducting. However, cooperative phenomena such as ferroelectricity in the 2D limit have not been well explored. Here, we report room-temperature ferroelectricity in 2D CuInP2S6 (CIPS) with a transition temperature of ∼320 K. Switchable polarization is observed in thin CIPS of ∼4 nm. To demonstrate the potential of this 2D ferroelectric material, we prepare a van der Waals (vdW) ferroelectric diode formed by CIPS/Si heterostructure, which shows good memory behaviour with on/off ratio of ∼100. The addition of ferroelectricity to the 2D family opens up possibilities for numerous novel applications, including sensors, actuators, non-volatile memory devices, and various vdW heterostructures based on 2D ferroelectricity. Two dimensional materials are promising for electronic applications, which await the exploration of cooperative phenomena. Here, Liu et al. report switchable ferroelectric polarization in thin CuInP2S6 film at room temperature, demonstrating good memory behaviour with on/off ratio of ∼100 based on two-dimensional ferroelectricity.