Fully transparent ZnO thin-film transistor produced at room temperature
Fully transparent ZnO thin-film transistor produced at room temperature
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DOI：
10.1002/adma.200400368
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发表时间：
2005-03-08
影响因子：
29.4
通讯作者：
Martins, RFP
中科院分区：
文献类型：
--
作者：
Fortunato, EMC;Barquinha, PMC;Martins, RFP
全透明薄膜晶体管（TF-Fs）是在室温下射频磁控溅射生产。在不同的栅极电压（V-GS）下测量作为漏极电压（V-DS）的函数的漏极电流（I-DS），显示TFT具有“硬饱和”，导通电流约为0.2 mA（见图），饱和迁移率为20 cm（2）V-1 s（-1）。光学和电学特性以及与低成本塑料基板的制造工艺的兼容性显示出隐形和柔性电子电路的前景。
Fully transparent thin-film transistors (TF-Fs) are produced at room temperature by radiofrequency magnetron sputtering. Measuring the drain current (I-DS) as a function of drain voltage (V-DS) at different gate voltages (V-GS) shows the TFTs possess "hard saturation" with on-currents of about 0.2 mA (see Figure) and saturation mobilities of 20 cm(2) V-1 s(-1). The optical and electrical properties and the compatibility of the fabrication process with low-cost plastic substrates show promise for invisible and flexible electronic circuits.