Variability in long-duration operation of silicon tip field emission devices
Variability in long-duration operation of silicon tip field emission devices
复制标题
硅尖端场发射器件长期运行的可变性
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
R. Stevens
中科院分区：
文献类型：
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作者：
K. Aplin;B. Kent;L. Wang;H. Lockwood;J. Rouse;R. Stevens
开发可靠的场发射器件需要详细描述器件寿命期间的变异性。理论上，硅尖制造工艺和测试设备的限制预计会导致场发射电流发生~ 5%的变化。在软件反馈回路控制下，对恒压和恒流下的长时间发射电流进行了测量。两种工作模式的功率谱有显著差异。确定软件反馈回路响应；当通过调制栅极电压来控制发射时，预计它将对发射电流的标准差贡献~ 1%。恒压时间序列与软件反馈环响应的卷积再现了恒流时间序列的频谱特征，表明两种工作模式之间的许多差异是由工作模式本身引起的，而不是由所测试的场发射体引起的。这对……
Development of reliable field emission devices requires detailed characterization of variability over the device lifetime. Silicon tip manufacturing processes and test equipment limitations are theoretically predicted to cause ∼5% variability in field emission currents. Long-duration emission current measurements at both constant voltage and constant current, controlled with a software feedback loop, were made. Power spectra from the two operational modes were significantly different. The software feedback loop response was determined; it is expected to contribute ∼1% of the standard deviation in emission current when used to control emission by modulating the gate voltage. Convolution of constant voltage time series with the software feedback loop response reproduced the spectral characteristics of constant current time series, indicating that many of the differences between the two operating modes were caused by the operating mode itself rather than the field emitters tested. This has implications for t...