Hydrogen sensitivity of ZnO p-n homojunctions
Hydrogen sensitivity of ZnO p-n homojunctions
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DOI：
10.1016/j.snb.2005.11.018
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发表时间：
2006-09-12
影响因子：
8.4
通讯作者：
Basu, S.
中科院分区：
文献类型：
--
作者：
Hazra, S. K.;Basu, S.
研究了p-ZnO/n-ZnO结构在300和400 ℃下对500和1000 ppm氢气的传感器响应。p-n结表现得像隧道二极管，在300摄氏度以下对氢不敏感。分别采用直流溅射法（n-ZnO）和改进的CVD反向喷射法（p-ZnO）制备了p-ZnO/n-ZnO结。随着工作温度从300 ℃增加到400 ℃，在每个氢浓度下，器件的灵敏度增加，响应时间减少。并对可能的传感机理进行了讨论。(c)2005 Elsevier B. V.保留所有权利。
The sensor response of p-ZnO/n-ZnO structures was studied to 500 and 1000 ppm hydrogen at 300 and 400 degrees C. The p-n junctions behaved like tunnel diodes and were insensitive to hydrogen below 300 degrees C. The p-ZnO/n-ZnO junctions were fabricated by adopting techniques like d.c. sputtering (for n-ZnO) and modified CVD in a reverse spray mode (for p-ZnO), respectively. The sensitivity of the device increased and the response time decreased with increasing the operating temperature from 300 to 400 degrees C at each hydrogen concentration. A probable sensing mechanism has been discussed. (c) 2005 Elsevier B.V. All rights reserved.