XPS study of impurities in Si-doped AlN film
XPS study of impurities in Si-doped AlN film
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Si掺杂AlN薄膜中杂质的XPS研究
DOI：
10.1002/sia.6037
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发表时间：
2016
影响因子：
1.7
通讯作者：
Du G. T.
中科院分区：
文献类型：
--
作者：
Liang F.;Chen P.;Zhao D. G.;Jiang D. S.;Zhao Z. J.;Liu Z. S.;Zhu J. J.;Yang J.;Le L. C.;Liu W.;He X. G.;Li X. J.;Li X.;Liu S. T.;Yang H.;Liu J. P.;Zhang L. Q.;Zhang Y. T.;Du G. T.
本文报道了对低压下通过金属有机化学气相沉积（MOCVD）在n型6 H-SiC衬底上生长的100 nm厚AlN薄膜中杂质的XPS研究。在高真空系统中通过X射线光电子能谱（XPS）对Si掺杂的AlN薄膜进行表征，其揭示了杂质沿沿着深度的含量分布和化学状态。AlN薄膜在氩离子刻蚀前后的XPS分析表明，AlN薄膜中始终存在Ga、O和C的污染。特别是在MOCVD生长AlN薄膜的过程中，AlN薄膜表面的O污染主要是在薄膜表面引入的。同时，O原子主要以Al ― O和Ga ― O化学态与Al或Ga结合。特别是在AlN薄膜中，Ga原子始终处于Ga ― Ga键和Ga ― O键两种化学状态，说明Ga原子的聚集伴随着AlN的生长。版权所有© 2016约翰威利父子有限公司.
This paper reports an XPS study of impurities in a 100‐nm‐thick AlN film grown by metalorganic chemical vapor deposition (MOCVD) under low pressure on the n‐type 6H‐SiC substrate. The Si‐doped AlN film was characterized by the X‐ray photoelectron spectroscopy (XPS) in a high vacuum system, which reveals the content distribution and chemical states of impurities along depth. The XPS analysis of AlN film before and after argon‐ion etching indicates that there always exist Ga, O and C contaminations in AlN film. Especially, O contamination on the AlN film surface is mostly introduced during the growth of AlN layer by MOCVD. Meanwhile, most of O atoms bind with Al or Ga in Al―O and Ga―O chemical states. In particular, the Ga atoms in AlN film are always in two chemical states, i.e. Ga―Ga bond and Ga―O bond, which demonstrates that the aggregation of Ga is accompanying with AlN growth. Copyright © 2016 John Wiley & Sons, Ltd.