A comparative study of the physical properties of Sb2S3 thin films treated with N2 AC plasma and thermal annealing in N2
A comparative study of the physical properties of Sb2S3 thin films treated with N2 AC plasma and thermal annealing in N2
复制标题
DOI：
10.1016/j.apsusc.2009.10.081
复制
发表时间：
2010-02-01
影响因子：
6.7
通讯作者：
Reyes, P.
中科院分区：
文献类型：
--
作者：
Calixto-Rodriguez, M.;Martinez, H.;Reyes, P.
采用氮交流等离子体和氮气氛热退火对化学浴沉积法制备的as沉积硫化锑薄膜进行了处理。通过x射线衍射（XRD）、能量色散x射线能谱、扫描电子显微镜、原子力显微镜、紫外可见光谱和电学测量对沉积态、等离子体处理和热退火的硫化锑薄膜进行了表征。结果表明，沉积后处理改变了Sb2S3薄膜的晶体结构、形貌和光电性能。x射线衍射研究表明，在这两种情况下，薄膜的结晶度都得到了改善。原子力显微镜研究表明，薄膜形态的变化取决于所采用的沉积后处理。发射光谱（OES）分析表明，薄膜表面存在等离子体刻蚀，能量色散x射线光谱分析证实了这一事实。由于晶粒尺寸的增大，薄膜的光学带隙（E-g）减小（从2.36 eV减小到1.75 eV）。等离子体处理后，Sb2S3薄膜的电阻率从10(8)ω -cm降至10(6)ω -cm。(C) 2009 Elsevier b.v.版权所有
As-deposited antimony sulfide thin films prepared by chemical bath deposition were treated with nitrogen AC plasma and thermal annealing in nitrogen atmosphere. The as-deposited, plasma treated, and thermally annealed antimony sulfide thin films have been characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy, scanning electron microscopy, atomic force microscopy, UV-vis spectroscopy, and electrical measurements. The results have shown that post-deposition treatments modify the crystalline structure, the morphology, and the optoelectronic properties of Sb2S3 thin films. X-ray diffraction studies showed that the crystallinity of the films was improved in both cases. Atomic force microscopy studies showed that the change in the film morphology depends on the post-deposition treatment used. Optical emission spectroscopy (OES) analysis revealed the plasma etching on the surface of the film, this fact was corroborated by the energy dispersive X-ray spectroscopy analysis. The optical band gap of the films (E-g) decreased after post-deposition treatments (from 2.36 to 1.75 eV) due to the improvement in the grain sizes. The electrical resistivity of the Sb2S3 thin films decreased from 10(8) to 10(6) Omega-cm after plasma treatments. (C) 2009 Elsevier B. V. All rights reserved.