Temperature Dependence of Resistance of Conductive Filament Formed by Dielectric Breakdown
Temperature Dependence of Resistance of Conductive Filament Formed by Dielectric Breakdown
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DOI：
10.7567/jjap.52.06gf04
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发表时间：
2013-06
影响因子：
1.5
通讯作者：
S. Otsuka;Takashi Kato;Takuya Kyomi;Yoshifumi Hamada;Y. Tada;Tomohiro Shimizu;S. Shingubara
中科院分区：
文献类型：
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作者：
S. Otsuka;Takashi Kato;Takuya Kyomi;Yoshifumi Hamada;Y. Tada;Tomohiro Shimizu;S. Shingubara
研究了Cu/SiO2/Au阻变存储器的电流-电压（I-V）特性和电阻温度特性。此外，通过扫描电子显微镜（SEM）和横截面透射电子显微镜（TEM）观察导电点。获得了单极和双极操作模式。从电阻的温度依赖性，提出低阻态（LRS）的导电机制为金属导电，高阻态（HRS）的导电机制为变程跳跃（弗赫）导电。观察设备的结果支持这一建议。根据这些结果，我们提出了Cu/SiO2/Au器件的开关机制。
An investigation of current–voltage (I–V) characteristics and the temperature dependence of resistance in a resistive switching (RS) memory with a Cu/SiO2/Au device was performed. Moreover, conductive spots were observed by scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (TEM). Both unipolar and bipolar operation modes were obtained. From the temperature dependence of resistance, it is suggested that the conduction mechanism of the low resistance state (LRS) is metallic conduction and that of the high resistance state (HRS) is variable-range hopping (VRH) conduction. The results of observing the device support this suggestion. We propose the switching mechanism in the Cu/SiO2/Au device from these results.