Three-phonon Umklapp process in zigzag single-walled carbon nanotubes
Three-phonon Umklapp process in zigzag single-walled carbon nanotubes
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DOI:
10.1088/0953-8984/15/23/101
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发表时间:
2003-06
期刊:
影响因子:
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通讯作者:
Y. Xiao;X. H. Yan;J. Cao;J. Ding
中科院分区:
文献类型:
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作者:
Y. Xiao;X. H. Yan;J. Cao;J. Ding
The rate of relaxation of zigzag single-walled carbon nanotubes is calculated by consideration of three-phonon Umklapp process. The results show that the relaxation rate increases exponentially with phonon frequency at low frequency. The linear dependence of the relaxation rate on temperature is obtained. It is shown that the value of the phonon mean free path reaches a few micrometres, which is consistent with the estimated experimental result.