The fabrication of vertical light-emitting diodes using chemical lift-off process
The fabrication of vertical light-emitting diodes using chemical lift-off process
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DOI：
10.1109/lpt.2007.912491
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发表时间：
2008-01-01
影响因子：
2.6
通讯作者：
Yao, T.
中科院分区：
文献类型：
--
作者：
Ha, Jun-Seok;Lee, S. W.;Yao, T.
采用化学剥离工艺，在CrN缓冲层上选择性刻蚀，成功地制备了垂直发光二极管。新型的CrN金属层作为GaN LED生长的缓冲层工作良好，并且在选择性化学蚀刻期间被清楚地蚀刻掉。通过化学剥离的垂直LED显示出非常好的电流-电压性能，在350 mA下具有0.65 Ω的低串联电阻和3.11 V的低操作电压。此外，该器件可以工作在一个更高的注入正向电流（1118 mA，3.70 V）的导热金属基板，使高电流工作与良好的散热。
Vertical light-emitting diodes (LEDs) were successfully fabricated by a chemical lift-off process using a selectively etchable CrN buffer layer. The novel CrN metallic layer worked well as a buffer layer for growth of the GaN LED and was etched out clearly during selective chemical etching. The vertical LED by chemical lift-off showed very good current-voltage performance with low series resistance of 0.65 Omega and low operated voltage of 3.11 V at 350 mA. Also, this device could be operated at a much higher injection forward current (1118 mA at 3.70 V) by thermally conductive metal substrate which enabled the high current operation with excellent heat dissipation.