Effects of low-energy electron irradiation on formation of nitrogen-vacancy centers in single-crystal diamond
Effects of low-energy electron irradiation on formation of nitrogen-vacancy centers in single-crystal diamond
复制标题
DOI：
10.1088/1367-2630/14/4/043024
复制
发表时间：
2012-04-20
影响因子：
3.3
通讯作者：
Schenkel, T.
中科院分区：
文献类型：
--
作者：
Schwartz, J.;Aloni, S.;Schenkel, T.
在扫描电子显微镜中暴露于低能电子束（2-30 keV）局部诱导NV中心的形成，而不需要在已经注入氮离子的金刚石中进行热退火。我们发现，非热，电子束诱导的NV-形成的效率约为热退火的四分之一。但是，与单独的热退火相比，在暴露于低能电子之后的连续热退火步骤（800摄氏度）中的NV中心形成增加了高达1.8倍。这些观察点重建的氮空位复合物诱导的电子激发从低能量电子作为NV-中心形成机制，并确定本地电子激发作为空间控制的室温NV-中心形成的手段。
Exposure to beams of low-energy electrons (2-30 keV) in a scanning electron microscope locally induces formation of NV-centers without thermal annealing in diamonds that have been implanted with nitrogen ions. We find that non-thermal, electron-beam-induced NV-formation is about four times less efficient than thermal annealing. But NV-center formation in a consecutive thermal annealing step (800 degrees C) following exposure to low-energy electrons increases by a factor of up to 1.8 compared to thermal annealing alone. These observations point to reconstruction of nitrogen-vacancy complexes induced by electronic excitations from low-energy electrons as an NV-center formation mechanism and identify local electronic excitations as a means for spatially controlled room-temperature NV-center formation.