Electron emission mechanism from cubic boron nitride-coated molybdenum emitters
Electron emission mechanism from cubic boron nitride-coated molybdenum emitters
复制标题
立方氮化硼涂层钼发射体的电子发射机制
DOI：
10.1063/1.121492
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发表时间：
1998
影响因子：
4
通讯作者：
Z. Sitar
中科院分区：
文献类型：
--
作者：
B. McCarson;R. Schlesser;M. McClure;Z. Sitar
研究了涂有本征立方氮化硼 (c-BN) 的 Mo 尖端场发射电子的能量分布，以确定发射电子的来源。在超高真空条件下，在涂覆之前和之后从 Mo 发射器收集电压相关的场发射能量分布 (V-FEED) 光谱。相对于裸发射体，c-BN 涂层发射体在给定电压下的发射电流增加了两个数量级。涂覆有 c-BN 的发射器场发射电子的能量与所施加的电压呈线性关系。将 c-BN 涂层发射器的 V-FEED 数据外推到平带条件证明电子是从 c-BN/真空界面处 c-BN 涂层的导带最小值发射的。
The energy distribution of field-emitted electrons from Mo tips coated with intrinsic cubic boron nitride (c-BN) was studied in an effort to determine the origin of the emitted electrons. Voltage-dependent field-emission energy distribution (V-FEED) spectra were collected from the Mo emitters under ultra-high-vacuum conditions both before and after being coated. Emission current at a given voltage increased by as much as two orders of magnitude for the c-BN-coated emitters relative to bare emitters. The energy of field-emitted electrons from the c-BN-coated emitters was linearly dependent upon the applied voltage. Extrapolation of V-FEED data from c-BN-coated emitters to the flatband condition evidenced that the electrons were emitted from the conduction-band minimum of the c-BN coating at the c-BN/vacuum interface.