Growth control of GaAs nanowires using pulsed laser deposition with arsenic over-pressure
Growth control of GaAs nanowires using pulsed laser deposition with arsenic over-pressure
复制标题
使用砷超压脉冲激光沉积控制砷化镓纳米线的生长
DOI：
10.1088/0957-4484/18/48/485608
复制
发表时间：
2007
期刊：
影响因子：
3.5
通讯作者：
F. Y. Yang
中科院分区：
文献类型：
--
作者：
X. Zhao;A. Hauser;T. Lemberger;F. Y. Yang
采用脉冲激光烧蚀砷超压法，系统地研究了GaAs纳米线的生长条件。的单晶结构和几何形状的纳米线已被其特征在于各种生长条件。砷超压与As 2分子引入到系统中的多晶GaAs的热分解，以控制化学计量和形状的纳米线在生长过程中。在不同的砷超压下，GaAs纳米线呈现出多种几何形状，这可以通过气-液-固机制的不同生长过程来理解。在没有As 2过压的情况下，由于GaAs纳米线的分解，观察到具有不可控制的尺寸和几何形状的GaAs的分支生长，产生金属Ga，其用作GaAs在纳米线表面上的分支生长的催化剂。在最佳的As 2过压下，获得了直径均匀、直径分布小、长度大于20 μm、表面氧化层薄的单晶GaAs纳米线，并用于I-V特性测试。
Using pulsed laser ablation with arsenic over-pressure, the growth conditions for GaAs nanowires have been systematically investigated. The single-crystal structure and geometry of the nanowires have been characterized for various growth conditions. Arsenic over-pressure with As2 molecules was introduced into the system by thermal decomposition of polycrystalline GaAs to control the stoichiometry and shape of the nanowires during growth. GaAs nanowires exhibit a variety of geometries under varying arsenic over-pressures, which can be understood by different growth processes via a vapor–liquid–solid mechanism. Without As2 over-pressure, branched growth of GaAs with uncontrollable size and geometry was observed due to the decomposition of GaAs nanowires, producing metallic Ga which serves as catalysts for the branched growth of GaAs on the nanowire surfaces. Under optimal As2 over-pressure, single-crystal GaAs nanowires with uniform diameter, small diameter distribution, length over 20 µm and thin surface oxide layer were obtained and used for I–V characterization.