Spiral growth in epitaxial YBa2Cu3O7−x thin films produced by high deposition rate chemical vapor deposition
Spiral growth in epitaxial YBa2Cu3O7−x thin films produced by high deposition rate chemical vapor deposition
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高沉积速率化学气相沉积制备的外延 YBa2Cu3O7−x 薄膜的螺旋生长
DOI：
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发表时间：
1993
期刊：
影响因子：
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通讯作者：
A. Kaloyeros
中科院分区：
文献类型：
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作者：
L. Luo;M. Hawley;C. Maggiore;R. Dye;R. Muenchausen;L. Chen;B. Schmidt;A. Kaloyeros
采用高生长速率(≳4μm/h)的化学气相沉积工艺外延生长了YBa2Cu3O7−x(YBCO)薄膜。即使在这种高生长速率下，也观察到了螺旋生长机制，并且所生长的薄膜具有与物理气相沉积制备的薄膜相同的电学性质(T_c=92K，J_c=2×10~6A/cm~2)和结构特性。
A technologically useful chemical vapor deposition process with high growth rate (≳4 μm/h) was developed for the epitaxial growth of YBa2Cu3O7−x (YBCO) thin films. Even at the high growth rate used in this process, a spiral growth mechanism was observed and the films grown had electrical (Tc=92 K, Jc of 2×106A/cm2 at 77 K) and structural properties equal to films produced by physical vapor deposition.