Scaling of the anomalous Hall effect in SrRuO3
Scaling of the anomalous Hall effect in SrRuO3
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DOI：
10.1103/physrevb.84.174439
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发表时间：
2011-11-28
影响因子：
3.7
通讯作者：
Klein, Lior
中科院分区：
文献类型：
--
作者：
Haham, Noam;Shperber, Yishai;Klein, Lior
我们测量了巡游铁磁体SrRuO_3薄膜的反常霍尔效应(AHE)和电阻率Rho(Xy)。在较低温度下，AHE系数R-S随Rho(2)(Xx)变化，而在较高温度下，R-S达到一个峰值，然后在T-c以下改变符号。我们发现，对于所研究的所有薄膜，R-S随整个铁磁相的电阻率而变化。我们将观察到的行为归因于外在侧跳机制和内在Karplus-Luttinger(Berry相)机制的贡献，包括有限散射率的影响。
We measure the anomalous Hall effect (AHE) resistivity rho(xy) in thin films of the itinerant ferromagnet SrRuO3. At low temperatures, the AHE coefficient R-s varies with rho(2)(xx), and at higher temperatures, R-s reaches a peak and then changes sign just below T-c. We find that for all films studied, R-s scales with resistivity in the entire ferromagnetic phase. We attribute the observed behavior to the contribution of the extrinsic side-jumps mechanism and the intrinsic Karplus-Luttinger (Berry phase) mechanism, including the effect of finite scattering rates.