Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage
Homogeneous double-layer amorphous Si-doped indium oxide thin-film transistors for control of turn-on voltage
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DOI：
10.1063/1.4959822
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发表时间：
2016-07-28
影响因子：
3.2
通讯作者：
Tsukagoshi, Kazuhito
中科院分区：
文献类型：
--
作者：
Kizu, Takio;Aikawa, Shinya;Tsukagoshi, Kazuhito
我们制作了均匀的双层非晶硅掺杂氧化铟（ISO）薄膜晶体管（TFTs），其绝缘ISO帽层位于半导体ISO底层沟道层之上。均匀堆叠的ISO TFT在空气中退火后具有高迁移率（19.6 cm(2)/Vs）和正常关闭特性。它表现出正常关闭的特性，因为ISO绝缘子抑制氧解吸，这抑制了半导体ISO中氧空位（V-O）的形成。此外，我们还研究了双层ISO TFT在氢退火引起的导通电压大幅负位移后，通过臭氧退火处理的恢复情况。导通电压的恢复表明，半导体ISO中的密集V-O可以通过绝缘体ISO部分填充。控制分子在均匀双层中的渗透对于调整先进氧化物电子学中tft的性能是有用的。AIP出版社出版。
We fabricated homogeneous double-layer amorphous Si-doped indium oxide (ISO) thin-film transistors (TFTs) with an insulating ISO cap layer on top of a semiconducting ISO bottom channel layer. The homogeneously stacked ISO TFT exhibited high mobility (19.6 cm(2)/Vs) and normally-off characteristics after annealing in air. It exhibited normally-off characteristics because the ISO insulator suppressed oxygen desorption, which suppressed the formation of oxygen vacancies (V-O) in the semiconducting ISO. Furthermore, we investigated the recovery of the double-layer ISO TFT, after a large negative shift in turn-on voltage caused by hydrogen annealing, by treating it with annealing in ozone. The recovery in turn-on voltage indicates that the dense V-O in the semiconducting ISO can be partially filled through the insulator ISO. Controlling molecule penetration in the homogeneous double layer is useful for adjusting the properties of TFTs in advanced oxide electronics. Published by AIP Publishing.