Radiation effect in CMOS microprocessor exposed to intense mixed neutron and gamma radiation field

Radiation effect in CMOS microprocessor exposed to intense mixed neutron and gamma radiation field
复制标题

暴露于强混合中子和伽马辐射场的 CMOS 微处理器的辐射效应

DOI：
--
复制
发表时间：
2013
期刊：
European Conference on Radiation and Its Effects on Components and Systems
影响因子：
--
通讯作者：
Ding Lili
Ding Lili
中科院分区：
--
文献类型：
--
作者：
Jin Xiaoming;Ma Qiang;Qi Chao;Yang Shanchao;Li Ruibin;Bai Xiaoyan;Liu Yan;Wang Guizhen;Lin Dong;Chen Wei;Ding Lili

文献摘要

被引文献

相似文献

研究了微处理器在中子和γ射线混合辐射场中的辐射效应。Geant 4模拟计算的中子电离能沉积与实验数据符合较好。晶体管和电路之间的定性相关性。
Radiation effects of microprocessor in mixed neutron and gamma rays radiation field were researched. The ionizing energy deposited by neutron in Geant4 simulation accords with experimental data. Qualitative correlation is demonstrated between transistors and circuit.