Evolution of the Ionization Energy in Two- and Three-Dimensional Thin Films of Pentacene Grown on Silicon Oxide Surfaces.
Evolution of the Ionization Energy in Two- and Three-Dimensional Thin Films of Pentacene Grown on Silicon Oxide Surfaces.
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DOI：
10.1021/acs.jpclett.1c02723
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发表时间：
2021-09
期刊：
影响因子：
--
通讯作者：
K. Eguchi;H. Murata
中科院分区：
文献类型：
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作者：
K. Eguchi;H. Murata
利用光电子产额谱研究了二维和三维（2D和3D）薄膜中并五苯的电离能（IE）及其随薄膜覆盖率的变化。在2D薄膜中，发现并五苯的IE几乎恒定在4.91 eV，与其岛尺寸无关，平均岛尺寸超过1.6 × 104 nm 2。然而，在3D薄膜中，当在单层膜的顶部上堆叠额外的分子层时，清楚地观察到IE降低0.04 eV，并且在20个单层时IE降低至4.73 eV。这些实验结果表明，IE的演变在埋层的3D薄膜和显着的影响，相邻的分子层的IE在分层系统与分子聚集。
The ionization energy (IE) of pentacene in two- and three-dimensional (2D and 3D) thin films and its evolution with coverage were studied via photoelectron yield spectroscopy in ambient conditions. In the 2D thin films, the IE of pentacene was found to be nearly constant at 4.91 eV, irrespective of its island size, for an average island size exceeding 1.6 × 104 nm2. In the 3D thin films, however, a reduction in IE by 0.04 eV was clearly observed upon stacking an additional molecular layer on top of the monolayer film, and the IE decreased to 4.73 eV at 20 monolayers. These experimental findings demonstrate the IE evolution in the buried layers of the 3D thin films and the significant impact of the neighboring molecular layers on the IE in layered systems with molecular aggregation.