Atom Optics: Using Light to Position Atoms
Atom Optics: Using Light to Position Atoms
复制标题
原子光学：利用光定位原子
DOI：
10.1007/978-1-4612-0531-9_10
复制
发表时间：
1999
期刊：
影响因子：
--
通讯作者：
M. Prentiss
中科院分区：
文献类型：
--
作者：
J. McClelland;M. Prentiss
在大多数常规光刻技术中，光敏抗蚀剂用于将图案从掩模转移到衬底。这个过程是大规模并行的，因为一个掩模可以同时曝光数百万个特征。用传统的平版印刷术所能创造的特征的最小尺寸大约是所用光波波长的一半。光学光刻技术的扩展，包括深紫外光，预计到2001年将达到约0.10 μ m [l]的极限。已经提出用于产生比紫外光更小的特征的其他曝光技术，诸如电子束和X射线，是有问题的。例如，在传统的电子束系统中，写入过程是串行的，因此大的复杂图案需要很长的时间来写入。此外，在电子束和X射线光刻中，掩模和衬底可能被高能束损坏。因此，有很大的兴趣，在开发并行技术，用于创建纳米尺度的功能，没有损坏，没有掩模。原子光学的新领域提供了各种大规模并行制造技术，这些技术有望使用低能原子束创建具有良好对比度和高分辨率的纳米级特征。这些优点通过原子光学制造的”直写”性质而增强，即，结构可以直接沉积在衬底上，而不需要使用抗蚀剂所涉及的中间工艺步骤。
In most conventional lithography techniques, a light-sensitive resist is used to transfer a pattern from a mask to a substrate. The process is massively parallel because one mask can be used to expose millions of features at the same time. The minimum size of the features that can be created with conventionallithography is of the order of half the wavelength of the light being used. Extensions of optical lithographic techniques, involving deep ultraviolet light, are predicted to reach a limit of approximately 0.10 llm [l] by the year 2001. Other exposure technologies such as electron beam and x-ray, that have been proposed for producing smaller features than ultraviolet light, are problematic. For example, in conventional electron beam systems the writing process is serial, so large complicated patterns take a very long time to write. Moreover, in both electron beam and xray lithography, the masks and the substrates can be damaged by the high energy beams. Thus, there is great interest in developing parallel techniques for creating nanometer-scale features without damage and without masks. The new field of atom optics offers various massively parallel fabrication techniques which hold the promise for creating nanometer-scale features with good contrast and high resolution using low energy atomic beams. These advantages are augmented by the" direct-write" nature of atom optical fabrication, that is, structures can be deposited directly on a substrate without the intermediate process steps involved with using a resist.