Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method
Doping Fluctuation and Defect Formation in Fast 4H-SiC Crystal Growth Using a High-Temperature Gas Source Method
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使用高温气源法快速生长 4H-SiC 晶体时的掺杂波动和缺陷形成
DOI：
10.4028/www.scientific.net/msf.858.61
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
H. Tsuchida
中科院分区：
文献类型：
--
作者：
I. Kamata;N. Hoshino;Y. Tokuda;E. Makino;Naohiro Sugiyama;J. Kojima;H. Tsuchida
本文研究了用高温气源法以很快的生长速度(~gt；2.5 mm/h)生长的4H-SiC晶体的质量。阐明了氮气掺杂效率在小面流区和阶梯流区的差异。在宏观阶跃聚束模式下生长时，在宏观阶跃聚束区观察到掺杂起伏和空穴的形成。用同步辐射X射线形貌术研究了螺杆位错(TSD)在晶体中的传播。
This paper investigates the quality of 4H-SiC crystals grown at a very fast growth rate (> 2.5 mm/h) using a high-temperature gas source method. Differences in nitrogen doping efficiency were clarified in facet and step-flow regions. In case for growth in the macro-step bunching mode, doping fluctuation and void formation were observed in the macro-step bunching region. Propagation of threading screw dislocations (TSDs) in the grown crystal was also investigated by synchrotron X-ray topography.