Low temperature synthesis of highly oriented p-type Si1-xGex (x: 0–1) on an insulator by Al-induced layer exchange
Low temperature synthesis of highly oriented p-type Si1-xGex (x: 0–1) on an insulator by Al-induced layer exchange
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DOI：
10.1063/1.4996373
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发表时间：
2017-10
影响因子：
3.2
通讯作者：
K. Toko;K. Kusano;M. Nakata;T. Suemasu
中科院分区：
文献类型：
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作者：
K. Toko;K. Kusano;M. Nakata;T. Suemasu
组成可调的Si 1-xGex合金具有广泛的应用，包括在电子和光子器件中。我们研究了Al诱导层交换（ALILE）生长的非晶Si 1-xGex在绝缘体上。通过控制生长温度（≤ 400 °C），ALILE可使Si 1-xGex在整个成分范围内获得大晶粒（> 50 μm）和高度（111）取向（> 95%）。从与传统的固相结晶的比较，我们确定，这种特性的ALILE引起的成核活化能低，横向生长的高频因素。Si 1-xGex层是高度p型掺杂的，而工艺温度低，这要归功于具有固溶度极限的量的电激活Al原子。电导率接近那些散装单晶在一个数量级。绝缘体上的Si 1-xGex层不仅可用于先进的SiGe基器件，而且可用于虚拟衬底，所有这些都是有用的。
A composition tunable Si1-xGex alloy has a wide range of applications, including in electronic and photonic devices. We investigate the Al-induced layer exchange (ALILE) growth of amorphous Si1-xGex on an insulator. The ALILE allowed Si1-xGex to be large grained (> 50 μm) and highly (111)-oriented (> 95%) over the whole composition range by controlling the growth temperature (≤ 400 °C). From a comparison with conventional solid-phase crystallization, we determined that such characteristics of the ALILE arose from the low activation energy of nucleation and the high frequency factor of lateral growth. The Si1-xGex layers were highly p-type doped, whereas the process temperatures were low, thanks to the electrically activated Al atoms with the amount of solid solubility limit. The electrical conductivities approached those of bulk single crystals within one order of magnitude. The resulting Si1-xGex layer on an insulator is useful not only for advanced SiGe-based devices but also for virtual substrates, all...