X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy investigation of Al-related dipole at the HfO2/Si interface
X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy investigation of Al-related dipole at the HfO2/Si interface
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DOI：
10.1063/1.3066906
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发表时间：
2009-01
影响因子：
3.2
通讯作者：
L. Zhu;N. Barrett;P. Jégou;F. Martin;C. Leroux;E. Martinez;H. Grampeix;O. Renault;A. Chabli
中科院分区：
文献类型：
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作者：
L. Zhu;N. Barrett;P. Jégou;F. Martin;C. Leroux;E. Martinez;H. Grampeix;O. Renault;A. Chabli
在高k/SiO2界面处的氧化物层的存在可能导致与用于栅极堆叠的特定高k电介质相关的界面偶极子。用原子层沉积法制备了不同x值（x=0，0.4，0.8，1.2）的1 nm HfO 2/xnmAl 2 O3/SiO2/Si叠层。使用光电子能谱，铝相关的界面偶极子在HfO 2/Al 2 O3/SiO2栅堆叠已被确定。X射线光电子能谱分析表明，偶极子与界面铝硅酸盐的形成。偶极子位于Al_2O_3和SiO_2之间的铝-硅酸盐界面处，由于铝硅酸盐的生长，其强度随着Al_2O_3厚度的增加而增加。这种铝相关的界面偶极子在未来的正金属氧化物半导体器件中具有潜在的应用。
The presence of an ultrathin oxide layer at the high-k/SiO2 interface may result in an interfacial dipole related to the specific high-k dielectric used for the gate stacks. 1 nm HfO2/x nmAl2O3/SiO2/Si stacks with different x values (x=0, 0.4, 0.8, 1.2) have been prepared by atomic layer deposition. Using photoelectron spectroscopy, an Al-related interfacial dipole in the HfO2/Al2O3/SiO2 gate stack has been identified. X-ray photoelectron spectroscopy analysis shows that the dipole is correlated with the formation of an interfacial Al-silicate. The dipole is located at the Al-silicate interface between Al2O3 and SiO2, and its strength increases with the increase in Al2O3 thickness because of Al silicate growth. Such Al-related interfacial dipole should have potential applications in future positive metal-oxide-semiconductor devices.