Thermal decomposition of very thin oxide layers on Si(111)
Thermal decomposition of very thin oxide layers on Si(111)
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Si(111) 上非常薄的氧化层的热分解
DOI：
10.1116/1.577936
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发表时间：
1992
期刊：
影响因子：
--
通讯作者：
K. Sugii
中科院分区：
文献类型：
--
作者：
Y. Kobayashi;K. Sugii
我们研究了在Si（111）上通过氧吸附和化学处理制备的非常薄的氧化物层的热分解和脱附。氧化物的俄歇电子能谱，热脱附光谱和原子力显微镜检查。的分解机制急剧变化的氧化物厚度为10.6埃;的分解温度取决于氧化物厚于6埃的形成方法，但依赖性消失的氧化物薄于6埃。前者的结果可以定性地解释在氧化物之间的SiO扩散系数的差异。后者表明，分解速率由氧化物/Si界面处的反应决定，因为氧化物层如此薄，扩散不是主导因素。还讨论了在干氧/Si系统中热去除薄氧化物层用于逐层蚀刻或“单层剥离”的可能性。
We investigate the thermal decomposition and desorption of very thin oxide layers prepared on Si(111) by oxygen adsorption as well as by chemical treatments. The oxides are examined by Auger electron spectroscopy, thermal desorption spectroscopy, and atomic force microscopy. The decomposition mechanism changes drastically at an oxide thickness of ∼6 A; the decomposition temperature depends on the formation method for oxides thicker than 6 A, but the dependence disappears for oxides thinner than 6 A. The former result can be qualitatively interpreted by the difference in SiO diffusivity between the oxides. The latter suggests that the decomposition rate is governed by reactions at the oxide/Si interface because the oxide layer is so thin that diffusion is not the dominant factor. The possibility of thermally removing the thin oxide layer in a dry oxygen/Si system for layer‐by‐layer etching or ‘‘monolayer peeling’’ is also discussed.