Alumina Nanoparticle Interfacial Buffer Layer for Low-Bandgap Lead-Tin Perovskite Solar Cells
Alumina Nanoparticle Interfacial Buffer Layer for Low-Bandgap Lead-Tin Perovskite Solar Cells
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用于低带隙铅锡钙钛矿太阳能电池的氧化铝纳米颗粒界面缓冲层
DOI：
10.1002/adfm.202303012
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发表时间：
2023
影响因子：
19
通讯作者：
Jin H
中科院分区：
文献类型：
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作者：
Jin H
混合铅锡（Pb：Sn）卤化物钙钛矿是具有窄带隙（1.25-1.4 eV）的有前途的吸收剂，适用于高效全钙钛矿串联太阳能电池。然而，最佳厚度的Pb：Sn钙钛矿膜的溶液处理与其纯Pb对应物相比是众所周知的困难。这部分是由于锡基钙钛矿的快速结晶，导致具有高度粗糙度的膜。较粗糙的薄膜较难使用基于溶液的加工技术与后续层共形地涂覆，导致完成的器件中吸收体与顶部金属电极之间的接触，从而导致VOC、填充因子、效率和稳定性的损失。在此，本研究采用了分布在粗糙的Pb：Sn钙钛矿膜表面上的氧化铝纳米颗粒的非连续层。使用这种方法，随后的电子传输层的保形性得到改善，其厚度仅为数十纳米。整体最大功率点跟踪效率提高65%，稳态VOC提高28%。氧化铝纳米颗粒作为界面缓冲层的应用还导致高度可再现的Pb：Sn太阳能电池器件，同时改善了在全光谱模拟太阳辐照下在65 °C下的器件稳定性。老化后的器件的稳定性比原始Pb：Sn器件提高了6倍，寿命延长至120 h。
Mixed lead‐tin (Pb:Sn) halide perovskites are promising absorbers with narrow‐bandgaps (1.25–1.4 eV) suitable for high‐efficiency all‐perovskite tandem solar cells. However, solution processing of optimally thick Pb:Sn perovskite films is notoriously difficult in comparison with their neat‐Pb counterparts. This is partly due to the rapid crystallization of Sn‐based perovskites, resulting in films that have a high degree of roughness. Rougher films are harder to coat conformally with subsequent layers using solution‐based processing techniques leading to contact between the absorber and the top metal electrode in completed devices, resulting in a loss ofVOC, fill factor, efficiency, and stability. Herein, this study employs a non‐continuous layer of alumina nanoparticles distributed on the surface of rough Pb:Sn perovskite films. Using this approach, the conformality of the subsequent electron‐transport layer, which is only tens of nanometres in thickness is improved. The overall maximum‐power‐point‐tracked efficiency improves by 65% and the steady‐stateVOCimproves by 28%. Application of the alumina nanoparticles as an interfacial buffer layer also results in highly reproducible Pb:Sn solar cell devices while simultaneously improving device stability at 65 °C under full spectrum simulated solar irradiance. Aged devices show a six‐fold improvement in stability over pristine Pb:Sn devices, increasing their lifetime to 120 h.