Temperature controlled motion of an antiferromagnet-ferromagnet interface within a dopant-graded FeRh epilayer
Temperature controlled motion of an antiferromagnet-ferromagnet interface within a dopant-graded FeRh epilayer
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DOI：
10.1063/1.4907282
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发表时间：
2015-04-01
期刊：
影响因子：
6.1
通讯作者：
Marrows, C. H.
中科院分区：
文献类型：
--
作者：
Le Graet, C.;Charlton, T. R.;Marrows, C. H.
化学有序的B2 FeRh表现出显着的反铁磁-铁磁相变，是一阶。因此，它显示相共存，通常通过进行，通过在随机缺陷位置的成核，随后相边界畴壁的传播。转变发生在可以通过将其他金属掺杂到Rh位点上而改变的温度下。我们已经利用这一点，通过制备具有相反方向的Pd和Ir的掺杂梯度的外延层在其整个高度上产生对过渡过程的控制，产生在350 K和500 K之间发生的逐渐过渡。当样品被加热时，水平反铁磁-铁磁相边界畴壁逐渐向上移动穿过层，其位置由温度控制。该移动的磁畴壁以可被控制的方式影响层的磁化强度和电阻率，并因此被开发用于新颖的器件应用。(C)2015年作者。
Chemically ordered B2 FeRh exhibits a remarkable antiferromagnetic-ferromagnetic phase transition that is first order. It thus shows phase coexistence, usually by proceeding though nucleation at random defect sites followed by propagation of phase boundary domain walls. The transition occurs at a temperature that can be varied by doping other metals onto the Rh site. We have taken advantage of this to yield control over the transition process by preparing an epilayer with oppositely directed doping gradients of Pd and Ir throughout its height, yielding a gradual transition that occurs between 350 K and 500 K. As the sample is heated, a horizontal antiferromagnetic-ferromagnetic phase boundary domain wall moves gradually up through the layer, its position controlled by the temperature. This mobile magnetic domain wall affects the magnetisation and resistivity of the layer in a way that can be controlled, and hence exploited, for novel device applications. (C) 2015 Author(s).