Ultrathin CdTe solar cells with absorber layer thinner than 0.2 microns
Ultrathin CdTe solar cells with absorber layer thinner than 0.2 microns
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吸收层厚度小于0.2微米的超薄CdTe太阳能电池
DOI：
10.1051/epjap/2018180146
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Wang Deliang
中科院分区：
文献类型：
--
作者：
Wang Min;Li Xun;Wang Deliang
本研究制备了吸收层厚度为50 ~ 200nm的超薄碲化镉（CdTe）太阳能电池。短路电流（JSC）和开路电压（VOC）随吸收层厚度的减小而显著降低。jsc降低的主要原因是光吸收不足。即使如此，当吸收层厚度减少到普通cd /CdTe太阳能电池的约1%（即50 nm）时，jsc2仍为8.2 mA/cm2，约为普通CdTe太阳能电池的32%。本文还对造成voc降低的原因进行了探讨。分析了暗电流-电压特性，发现欧姆分流电流对总漏电流的贡献随着CdTe吸收层厚度的减小而增大。研究了超薄碲化镉太阳能电池在弱光辐照和不同温度下的器件特性。该研究为今后超薄碲化镉太阳能电池的制备提供了指导。
In this study, ultrathin Cadmium telluride (CdTe) solar cells with absorber thickness from 50 to 200 nm were fabricated. The short-circuit current (JSC) and open-circuit voltage (VOC) were found to decrease significantly with the thickness of absorber layer decreasing. The decrease of theJSCwas mainly because of the insufficient light absorption. Even so, theJSCwas still found to be 8.2 mA/cm2, which was about 32% of that of a normal CdTe solar cell when the thickness of absorber layer was reduced to ∼1% of that of a normal CdS/CdTe solar cell, i.e. 50 nm. The reasons, which caused the decrease ofVOC, were also discussed in this study. The dark current–voltage characteristics were analyzed and the contribution of ohmic shunting current to the total leakage current was found to increase with the thickness of CdTe absorber layer decreasing. The device characteristics of the ultrathin CdTe solar cells under weak light irradiance and at different temperatures were also investigated. This study provides a guideline for the fabrication of ultrathin CdTe solar cells in the future.