Void-Filling and Loss Reduction in PECVD Silica Waveguide Devices Using Boron–Germanium Codoped Upper Cladding
Void-Filling and Loss Reduction in PECVD Silica Waveguide Devices Using Boron–Germanium Codoped Upper Cladding
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DOI：
10.1109/lpt.2010.2064292
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发表时间：
2010-08
影响因子：
2.6
通讯作者：
Xufeng Lin;Xiao Ma;Jian-jun He
中科院分区：
文献类型：
--
作者：
Xufeng Lin;Xiao Ma;Jian-jun He
等离子体增强化学气相沉积(PECVD)是制备二氧化硅波导层的常用方法。当波导之间的间隙很小时，在上层包层的沉积过程中会产生空隙。本文提出了一种用硼-锗共掺上包层和高温退火法填充PECVD二氧化硅光波导空隙的新工艺。利用处理气体流量确定的合适掺杂浓度，在扫描电子显微镜下观察到了完全填充的带隙图像，使阵列波导光栅三路复用器的传输损耗降低了约2分贝。由于避免了使用有毒的磷化氢，与常用的硼磷硅酸盐玻璃工艺相比，该方法具有潜在的优势。
Plasma-enhanced chemical vapor deposition (PECVD) is commonly used for the deposition of silica waveguide layers. When the gaps between waveguides are small, voids are created during the deposition of the upper cladding. This letter presents a new process for filling the gaps of PECVD silica waveguides using boron-germanium codoped upper-cladding and high-temperature annealing. Using appropriate doping concentrations as determined by processing gas flow rates, the image of completely filled gap was observed by scanning electron microscopy, and the measured transmission loss of an arrayed waveguide grating triplexer is reduced by about 2 dB. By avoiding the use of toxic phosphine, the proposed method has potential advantages compared with the commonly used borophosphosilicate glass process.