Transient ellipsometric surface photoreflectance applied to GaAs
Transient ellipsometric surface photoreflectance applied to GaAs
复制标题
应用于 GaAs 的瞬态椭圆表面光反射
DOI：
10.1063/1.111752
复制
发表时间：
1994
影响因子：
4
通讯作者：
T. Carruthers
中科院分区：
文献类型：
--
作者：
M. Frankel;T. Carruthers
我们应用时间分辨反射椭圆偏振技术研究了光激励后GaAs体表面介电系数的动态特性。该技术允许分离介电指数变化的折射率和吸收分量，并考虑了可能的各向异性效应。光注入表面的载流子产生的电场微扰为∼7kV/cm，平均载流子密度为∼1018 cm−3，深度为∼0.2 5μm。测量的吸收分量变化与通常通过薄膜传输测量的不同，可归因于弗兰兹-凯尔德什效应。
We apply a time‐resolved reflection ellipsometric technique to study the dynamic properties of the surface dielectric index of GaAs after optical excitation. The technique allows the separation of the refractive and absorptive components of the dielectric index change and accounts for possible anisotropic effects. The carriers optically injected at the surface create electric field perturbations of ∼7 kV/cm for an average carrier density of ∼1018 cm−3 over a depth of ∼0.25 μm. The measured absorptive component change is shown to be qualitatively different from that typically measured via thin‐film transmission and can be attributed to the Franz–Keldysh effect.