Probing NV and SiV charge state dynamics using high-voltage nanosecond pulse and photoluminescence spectral analysis
Probing NV and SiV charge state dynamics using high-voltage nanosecond pulse and photoluminescence spectral analysis
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DOI：
10.1088/2633-4356/acf750
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发表时间：
2023-07
影响因子：
--
通讯作者：
Artur Pambukhchyan;Sizhe Weng;Indu Aravind;S. Cronin;Susumu Takahashi
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文献类型：
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作者：
Artur Pambukhchyan;Sizhe Weng;Indu Aravind;S. Cronin;Susumu Takahashi
金刚石中的氮空位（NV）和硅空位（SiV）色缺陷是量子技术中很有应用前景的体系。NV和SiV中心具有多个电荷态，并且它们的电荷态具有不同的电子、光学和自旋性质。对于NV中心，用于量子传感应用的大多数研究针对带负电荷的NV（NV$^{-}$），并且NV中心处于NV$^{-}$状态是重要的。然而，已知NV中心在激光激发下转换为中性带电状态（NV$^{0}$）。NV和SiV中心的能量有利的电荷状态取决于它们的局部环境。理解和控制电荷态动力学对于它们的量子应用是至关重要的。在这项工作中，我们讨论了高压纳秒脉冲放电下的NV和SiV中心的电荷态动力学。在金刚石晶体中，NV和SiV心共存。高电压脉冲使得能够有效地操纵电荷状态。这些电压引起的电荷状态的变化探测其光致发光光谱分析。实验分析结果表明，高压纳秒脉冲引起化学势的移动，并能以$\sim$ MHz的跃迁速率转换NV和SiV心的电荷态.这一结果还表明，样品中SiV中心的主要群体是双负电荷态（SiV$^{2-}$），这是经常被忽视，因为它的非荧光和非磁性的性质。该演示为将来快速操纵NV和SiV电荷状态的方法铺平了道路。
Nitrogen-vacancy (NV) and silicon-vacancy (SiV) color defects in diamond are promising systems for applications in quantum technology. The NV and SiV centers have multiple charge states, and their charge states have different electronic, optical and spin properties. For the NV centers, most investigations for quantum sensing applications are targeted on the negatively charged NV (NV$^{-}$), and it is important for the NV centers to be in the NV$^{-}$ state. However, it is known that the NV centers are converted to the neutrally charged state (NV$^{0}$) under laser excitation. An energetically favorable charge state for the NV and SiV centers depends on their local environments. It is essential to understand and control the charge state dynamics for their quantum applications. In this work, we discuss the charge state dynamics of NV and SiV centers under high-voltage nanosecond pulse discharges. The NV and SiV centers coexist in the diamond crystal. The high-voltage pulses enable manipulating the charge states efficiently. These voltage-induced changes in charge states are probed by their photoluminescence spectral analysis. The analysis result from the present experiment shows that the high-voltage nanosecond pulses cause shifts of the chemical potential and can convert the charge states of NV and SiV centers with the transition rates of $\sim$ MHz. This result also indicates that the major population of the SiV centers in the sample is the doubly negatively charged state (SiV$^{2-}$), which is often overlooked because of its non-fluorescent and non-magnetic nature. This demonstration paves a path for a method of rapid manipulation of the NV and SiV charge states in the future.