Enhanced spin accumulation at room temperature in graphene spin valves with amorphous carbon interfacial layers
Enhanced spin accumulation at room temperature in graphene spin valves with amorphous carbon interfacial layers
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具有非晶碳界面层的石墨烯自旋阀在室温下增强自旋积累
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
S. Valenzuela
中科院分区：
文献类型：
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作者：
I. Neumann;M. Costache;G. Bridoux;J. F. Sierra;S. Valenzuela
我们证明了一个大的增强的自旋积累在单层石墨烯以下的电子束诱导沉积的无定形碳层在铁磁体-石墨烯界面。当石墨烯沉积在聚（甲基丙烯酸甲酯）（PMMA）上并暴露于足够的电子束剂量以交联PMMA时，增强为104倍，而当石墨烯直接沉积在SiO2上并暴露于相同剂量时，增强为103倍。我们将这种差异归因于在前一种情况下更有效的碳沉积，这是由于PMMA释放的含碳化合物的存在增加。无定形碳界面可以承受非常大的电流密度而不退化，这导致在室温下超过500 μeV的非常大的自旋积累。
We demonstrate a large enhancement of the spin accumulation in monolayer graphene following electron-beam induced deposition of an amorphous carbon layer at the ferromagnet-graphene interface. The enhancement is 104-fold when graphene is deposited onto poly(methyl metacrylate) (PMMA) and exposed with sufficient electron-beam dose to cross-link the PMMA, and 103-fold when graphene is deposited directly onto SiO2 and exposed with identical dose. We attribute the difference to a more efficient carbon deposition in the former case due to an increase in the presence of compounds containing carbon, which are released by the PMMA. The amorphous carbon interface can sustain very large current densities without degrading, which leads to very large spin accumulations exceeding 500 μeV at room temperature.