A Flyback Converter with SiC Power MOSFET Operating at 10 MHz: Reducing Leakage Inductance for Improvement of Switching Behaviors
A Flyback Converter with SiC Power MOSFET Operating at 10 MHz: Reducing Leakage Inductance for Improvement of Switching Behaviors
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DOI：
10.23919/ipec.2018.8507361
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发表时间：
2018-05
期刊：
影响因子：
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通讯作者：
Kazuki Hashimoto;T. Okuda;T. Hikihara
中科院分区：
文献类型：
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作者：
Kazuki Hashimoto;T. Okuda;T. Hikihara
本文研究了一种高频反激变换器。为了提高反激式变换器的开关频率，重点研究了原边Transformer的漏感对关断特性的影响。研究发现，Transformer的漏感限制了原边的关断行为。通过减小原边Transformer的漏感，改进的反激变换器实现了10 MHz的工作频率。输出电压由占空比控制在30%~ 60%。反激式变换器的最大输出功率为16 W，最大转换效率为67%。
A high-frequency flyback converter is investigated in this paper. In order to increase the switching frequency of the flyback converter, we focus on the impacts of the leakage inductance of the transformer at the primary side on the transients of the turn-off characteristics. It is found that the leakage inductance of the transformer limits the turn-off behaviors of the primary side. By reducing the leakage inductance of the transformer on the primary side, the improved flyback converter achieves the 10 MHz operation. The output voltage is controlled by duty ratio from 30% to 60%. The maximum output power of 16 W and the maximum conversion efficiency of 67% are observed in the flyback converter.