Non-c-axis-Oriented EuBa2Cu3O7-δThin Films Grown on Al2O3(1\bar102) Substrates with CeO2Buffer Layers
Non-c-axis-Oriented EuBa2Cu3O7-δThin Films Grown on Al2O3(1\bar102) Substrates with CeO2Buffer Layers
复制标题
带CeO2缓冲层的Al2O3(1ar102)衬底上生长的非c轴取向EuBa2Cu3O7-δ薄膜
DOI：
10.1143/jjap.38.5857
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
O. Michikami
中科院分区：
文献类型：
--
作者：
H. Wakana;A. Yokosawa;O. Michikami
采用直流磁控溅射法在带有CeO 2缓冲层的Al 2 O3（102）衬底上制备了不同取向的EuBa 2Cu 3 O 7-δ（EBCO）薄膜。在离轴射频磁控溅射CeO 2（001）薄膜后立即沉积EBCO薄膜。研究了衬底温度和氧浓度对EBCO薄膜外延取向的影响。随着氧浓度的增加，EBCO薄膜的表面粗糙度增加。存在合适的氧浓度。明确了EBCO薄膜的取向依赖于CeO 2膜厚度。分别在30-90埃厚和大于700埃厚的CeO 2缓冲层上获得了（100）和（110）取向的EBCO薄膜。（100）和（110）取向的EBCO膜分别具有Al 2 O3 [120]<$CeO2 [100]<$EBCO[013]和Al 2 O3 [110]<$CeO2 [100]<$EBCO[10]的面内外延取向关系。在50埃厚的CeO 2（001）缓冲层上沉积的（100）取向EBCO膜具有72.0 K的Tce，并且在750埃厚的CeO 2（001）缓冲层上沉积的（110）取向EBCO膜具有70.0 K的Tce。当CeO 2缓冲层厚度大于800埃时，Tce随CeO 2缓冲层厚度的增加而降低。a轴取向的EBCO薄膜表现出约85.4 K的Tce的50-A厚的CeO 2缓冲层通过自模板法制备。
EuBa2Cu3O7-δ (EBCO) thin films with different growth orientations were prepared on Al2O3(102) substrates with CeO2 buffer layers by dc magnetron sputtering. The EBCO thin films were deposited immediately after off-axis rf magnetron sputtering of CeO2(001) films. The effects of substrate temperature and oxygen concent on epitaxial orientation of EBCO thin films were examined. With the increase in oxygen concentration, the surface roughness of an EBCO thin film increased. An appropriate oxygen concentration existed. It was clarified that the orientation of an EBCO thin film depended on CeO2 film thickness. The (100)- and (110)-oriented EBCO thin films were obtained on CeO2 buffer layers 30–90 A thick and more than 700 A thick, respectively. The (100)- and (110)-oriented EBCO films had in-plane epitaxial orientation relationships of Al2O3[120] ∥CeO2[100] ∥EBCO[013] and Al2O3[110] ∥CeO2[100] ∥EBCO[10], respectively. The (100)-oriented EBCO films deposited on 50-A-thick CeO2 (001) buffer layers had Tce's of 72.0 K, and (110)-oriented EBCO films deposited on 750-A-thick CeO2(001) buffer layers had Tce's of 70.0 K. The Tce decreased with increasing CeO2 buffer layer thickness above 800 A. The a-axis-oriented EBCO thin films exhibited Tce's of about 85.4 K on the 50-A-thick CeO2 buffer layers prepared by a self-template method.