Remarkable optical red shift and extremely high optical absorption coefficient of V-Ga co-doped TiO2
Remarkable optical red shift and extremely high optical absorption coefficient of V-Ga co-doped TiO2
复制标题
V-Ga共掺杂TiO2具有显着的光学红移和极高的光学吸收系数
DOI：
10.1063/1.4733971
复制
发表时间：
2012-07-01
影响因子：
3.2
通讯作者：
Shao, Guosheng
中科院分区：
文献类型：
--
作者：
Deng, Quanrong;Han, Xiaoping;Shao, Guosheng
首次尝试通过V-Ga共掺杂薄膜研究过渡金属和sp金属共掺杂对TiO_2电子结构和相关光学性质的影响。采用脉冲激光烧蚀法在熔融石英衬底上制备了V-Ga共掺杂金红石型TiO 2薄膜，并对其进行了高温热处理。在V-Ga共掺杂的TiO 2材料中观察到光吸收边的巨大红移，从紫外到红外区域具有高吸收系数。通过结合结构表征和理论建模，这归因于两种金属之间的p-d杂化。这导致额外的能带与导带的最小值重叠，从而导致不含中间带隙状态的显著变窄的带隙。共掺杂相的直接带隙是共掺杂二氧化钛显著高的光吸收系数的关键。(C)2012年美国物理学会。[http：//dx.doi.org/10.1063/1.4733971]
A first attempt has been made to study the effect of codoping of transition metal and sp metal on the electronic structure and associated optical properties of TiO2, through V-Ga codoped thin films. V-Ga codoped rutile TiO2 films were fabricated on fused quartz substrates using pulsed laser ablation, followed by heat treatment at high temperatures. Gigantic redshift in the optical absorption edge was observed in V-Ga co-doped TiO2 materials, from UV to infrared region with high absorption coefficient. Through combined structural characterization and theoretical modeling, this is attributed to the p-d hybridization between the two metals. This leads to additional energy bands to overlap with the minimum of the conduction band, leading to remarkably narrowed band gap free of mid-gap states. The direct-gap of the co-doped phase is key to the remarkably high optical absorption coefficient of the coped titania. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733971]