Room-Temperature Single-Photon Detection With 1.5-GHz Gated InGaAs/InP Avalanche Photodiode
Room-Temperature Single-Photon Detection With 1.5-GHz Gated InGaAs/InP Avalanche Photodiode
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DOI：
10.1109/lpt.2016.2630273
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发表时间：
2017
影响因子：
2.6
通讯作者：
Yan Liang;Yuanjin Chen;Zinan Huang;Guomin Bai;Minzhi Yu;H. Zeng
中科院分区：
文献类型：
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作者：
Yan Liang;Yuanjin Chen;Zinan Huang;Guomin Bai;Minzhi Yu;H. Zeng
利用InGaAs/InP雪崩光电二极管（APD）设计了一种室温单光子探测器，该探测器具有可忽略的后脉冲效应和低的暗计数率。APD工作在1.5 GHz正弦门控盖革模式下，通过使用适当的低通滤波器，以最大限度地减少电容尖峰噪声。探测效率约为21%，暗计数率为8×10-5/门，后脉冲概率为1.4%，表现出良好的无冷却性能。此外，我们改变了正弦门的幅度，以进一步优化性能。室温单光子探测器结构紧凑、功耗低，在量子密钥分配和超远距离激光测距系统中具有实用价值。
A room-temperature single-photon detector was demonstrated with InGaAs/InP avalanche photodiode (APD) with negligible afterpulse effect and low dark count rates. The APD was operated in 1.5-GHz sinusoidally gated Geiger mode by using appropriate low-pass filters to minimize the capacitive spike noises. A detection efficiency of ~21% was attained with the dark count rate of 8×10-5 per gate and a afterpulse probability of 1.4%, showing excellent performance without cooling. Moreover, we varied the amplitude of the sinusoidal gates to further optimize the performance. The room-temperature single-photon detectors with compact structures and low power consumption offer advantages in practical quantum key distribution and ultradistance laser ranging systems.