Influence of temperature on atomic layer epitaxial growth of indium nitride assessed with in situ grazing incidence small-angle x-ray scattering
Influence of temperature on atomic layer epitaxial growth of indium nitride assessed with in situ grazing incidence small-angle x-ray scattering
复制标题
原位掠入射小角X射线散射评估温度对氮化铟原子层外延生长的影响
DOI：
10.1116/1.5081919
复制
发表时间：
2019
影响因子：
2.9
通讯作者：
Ludwig, Karl F.
中科院分区：
文献类型：
--
作者：
Woodward, Jeffrey M.;Rosenberg, Samantha G.;Kozen, Alexander C.;Nepal, Neeraj;Johnson, Scooter D.;Wagenbach, Christa;Rowley, Andrew H.;Robinson, Zachary R.;Joress, Howie;Ludwig, Karl F.
