Distinct Fine and Coarse Ripples on 4H–SiC Single Crystal Induced by Femtosecond Laser Irradiation
Distinct Fine and Coarse Ripples on 4H–SiC Single Crystal Induced by Femtosecond Laser Irradiation
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DOI：
10.1143/jjap.45.l444
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发表时间：
2006-04
影响因子：
1.5
通讯作者：
T. Tomita;K. Kinoshita;S. Matsuo;S. Hashimoto
中科院分区：
文献类型：
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作者：
T. Tomita;K. Kinoshita;S. Matsuo;S. Hashimoto
在飞秒脉冲激光照射下，在4 H-SiC单晶表面上制造了被称为“波纹”的周期性结构。周期性结构由两个同心区域的照射点，这是明确区分的周期。表面形貌的特征在于作为能量，积累数，和脉冲的间隔的函数。首次发现了细、粗波纹阈值的差异。讨论了这些结构的可能形成机制。
Upon femtosecond pulsed-laser irradiation, periodic structures referred to as “ripples” were fabricated on the surface of a 4H–SiC single crystal. The periodic structures consisted of two concentric regions in the irradiated spots which were clearly distinguished by the period. Surface morphologies were characterized as a function of energy, accumulation number, and interval of pulses. The difference in the threshold of fine and coarse ripples was identified for the first time. The possible formation mechanisms of these structures were discussed.