The influence of conduction band plasmons on core-level photoemission spectra of InN

The influence of conduction band plasmons on core-level photoemission spectra of InN
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DOI:
10.1016/j.susc.2007.12.026
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发表时间:
2008-02-15
期刊:
影响因子:
1.9
通讯作者:
McConville, C. F.
McConville, C. F.
中科院分区:
化学3区
文献类型:
--
作者:
King, P. D. C.;Veal, T. D.;McConville, C. F.

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用高分辨X射线光电子能谱研究了InN光电子能谱中的芯能级线型。In 3d和N 1 s核心能级是不对称的,显示出高结合能的尾部,这归因于InN表面处存在的累积层中的导带等离子体激元的非弹性损失和/或屏蔽。非对称尾部的范围随着表面费米能级位置的降低而减小,这与累积层中较低的电子密度相关。(C)2008 Elsevier B. V.保留所有权利。
The core-level lineshape in photoemission spectra of InN is studied by high-resolution X-ray photoemission spectroscopy. The In 3d and N 1s core-levels are asymmetric, displaying a high binding energy tail which is attributed to inelastic losses to and/or screening by conduction band plasmons in the accumulation layer present at InN surfaces. The extent of the asymmetric tail decreases with decreasing surface Fermi level position associated with a lower density of electrons in the accumulation layer. (C) 2008 Elsevier B.V. All rights reserved.